Lam Research Corporation June 15th Short Interest Update

Lam Research Corporation (NASDAQ:LRCX) encountered a drop of 0.6% or -173,939 shares in the short positions. The number dropped from 30,557,019 on May 31,2016 to 30,383,080 on June 15,2016. The final interest is 19.1% of the floated stock. The days to cover figure of 18 can be arrived using the average daily exchange of 1,717,995 shares. The information was released by Financial Industry Regulatory Authority, Inc (FINRA) on June 24th after market close.

Lam Research Corporation (NASDAQ:LRCX): The stock opened at $82.99 on Friday but the bulls could not build on the opening and the stock topped out at $85.80 for the day. The stock traded down to $82.28 during the day, due to lack of any buying support eventually closed down at $82.28 with a loss of -5.62% for the day. The stock had closed at $87.18 on the previous day. The total traded volume was 5,740,655 shares.

The company shares have rallied 2.59% from its 1 Year high price. On Jun 23, 2016, the shares registered one year high at $87.19 and the one year low was seen on Sep 24, 2015. The 50-Day Moving Average price is $80.14 and the 200 Day Moving Average price is recorded at $76.82.

Lam Research Corporation (NASDAQ:LRCX) has tumbled 0.74% during the past week and has dropped 0.83% in the last 4 week period. In the past week, the company has outperformed the S&P 500 by 0.91% and the outperformance has advanced to 2.17% for the last 4 weeks period.

Lam Research Corporation (Lam Research) is a supplier of wafer fabrication equipment and services to the semiconductor industry. The Companys products are used primarily in front-end wafer processing, which involves the steps that create the active components of a device and their wiring. It also addresses processes for back-end wafer-level packaging (WLP). In addition, its products are offered for related markets that rely on semiconductor processes and require production-proven manufacturing capability, such as micro-electromechanical systems (MEMS). Its thin film deposition systems form a devices sub-microscopic layers of conducting (metal) or insulating (dielectric) materials. It is a provider of plasma etch, a process step that selectively removes materials from the wafer to create the features and patterns of a device. Its wet spin clean and plasma-based bevel clean products remove particles, residues and film from the wafer surface before or after adjacent processes.

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